Gas sensor fet, gas sensor, and method for manufacturing gas sensor fet
AssigneeHitachi High-Tech Corporation
InventorsHiroyuki UCHIYAMA, Yoshitaka SASAGO, Yuan BU
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AssigneeHitachi High-Tech Corporation
InventorsHiroyuki UCHIYAMA, Yoshitaka SASAGO, Yuan BU
Estimating the term…
A gas sensor FET with improved gas detection sensitivity is provided. The gas sensor FET includes a semiconductor substrate and a gate electrode layer formed on the semiconductor substrate and functioning as a gas detection unit. The gate electrode layer has a catalytic metal layer including a side exposed to an atmosphere. A side exposed to an atmosphere of the catalytic metal layer has a structure in which a plurality of dendritic-shaped structures, each including a plurality of fine structure portions smaller and finer than a columnar portion formed on a surface of the columnar portion, are arranged two-dimensionally. The plurality of dendritic-shaped structures are electrically connected to each other.
A gas sensor FET comprising:
A method for manufacturing a gas sensor FET including a semiconductor substrate and a gas detection unit that is formed on the semiconductor substrate, constitutes a gate electrode layer, and includes a catalytic metal layer having a side exposed to an atmosphere, the method comprising:
Dependencies are inferred from the claim text.