Semiconductor package

A semiconductor package comprising:

• a substrate;
• a first semiconductor chip provided on an upper surface of the substrate;
• an interposer provided on the first semiconductor chip;
• a conductive pad provided on the upper surface of the substrate;
• a connecting portion provided between the upper surface of the substrate and a lower surface of the interposer, wherein the connecting portion is spaced apart from the first semiconductor chip along a horizontal direction parallel to the upper surface of the substrate and electrically connects the conductive pad and the interposer, and the connecting portion comprises a metal post that extends in a vertical direction perpendicular to the upper surface of the substrate and a first metal layer that surrounds a surface of the metal post;
• and
• a mold layer surrounding each of the conductive pad, the connecting portion and the first semiconductor chip between the upper surface of the substrate and the lower surface of the interposer,
• wherein the first metal layer is in contact with the metal post, and
• wherein a width of the connecting portion in the horizontal direction and a width of the conductive pad in the horizontal direction are equal to each other.

A semiconductor package comprising:

• a substrate;
• a first semiconductor chip provided on an upper surface of the substrate;
• an interposer provided on the first semiconductor chip;
• a conductive pad provided on the upper surface of the substrate;
• and
• a connecting portion provided between the upper surface of the substrate and a lower surface of the interposer, wherein the connecting portion is spaced apart from the first semiconductor chip along a horizontal direction parallel to the upper surface of the substrate and electrically connects the conductive pad and the interposer, and the connecting portion comprises a metal post that extends in a vertical direction perpendicular to the upper surface of the substrate, a second metal layer that surrounds a surface of the metal post, and a first metal layer that surrounds a surface of the second metal layer,
• wherein the first metal layer is in contact with the second metal layer, and the second metal layer is in contact with the metal post, and
• wherein a width of the connecting portion in the horizontal direction and a width of the conductive pad in the horizontal direction are equal to each other.