Semiconductor device and manufacturing method thereof
AssigneeNanya Technology Corporation
InventorHui-Lin CHEN
Life of this patent
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Abstract
A semiconductor device includes a substrate, a dielectric layer, a metal line layer, a passivation structure, an active bump, and a dummy bump. The dielectric layer is over the substrate. The metal line layer is over the dielectric layer, in which the metal line layer includes a via portion penetrating the dielectric layer. The passivation structure is over the metal line layer, in which the passivation structure includes a protrusion surrounded by the via portion of the metal line layer and a horizontal portion of the protrusion. The active bump penetrates the passivation structure to electrically connect to the metal line layer. The dummy bump is over the passivation structure, wherein the dummy bump overlaps the protrusion of the passivation structure in a cross-section view.
Claims20
A semiconductor device, comprising:
- a substrate;
- a dielectric layer over the substrate;
- a metal line layer over the dielectric layer, wherein the metal line layer comprises a via portion penetrating the dielectric layer;
- a passivation structure over the metal line layer, wherein the passivation structure comprises a protrusion surrounded by the via portion of the metal line layer and a horizontal portion of the protrusion;
- an active bump penetrating the passivation structure to electrically connect to the metal line layer;
- and
- a dummy bump over the passivation structure, wherein the dummy bump overlaps the protrusion of the passivation structure in a cross-section view.
A manufacturing method of a semiconductor device, comprising:
- forming a dielectric layer having an opening over a first substrate;
- forming a metal line layer lining the dielectric layer and the opening;
- forming a passivation structure over the metal line layer, wherein the passivation structure overfills the opening and forms a protrusion in the opening and a horizontal portion over the protrusion;
- forming an active bump penetrates through the passivation structure to electrically connect the metal line layer;
- and
- forming a dummy bump over the passivation structure, wherein the dummy bump overlaps the protrusion of the passivation structure in a cross-section view.
Dependencies are inferred from the claim text.