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US 2026/0256012 A1Published application
Hybrid bonding structure, manufacturing method therefor, and semiconductor device
AssigneeCXMT Corporation
InventorQingchun FANG
Life of this patent
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Abstract
A hybrid bonding structure, a manufacturing method therefor, and a semiconductor device are provided. The hybrid bonding structure includes: a dielectric layer, including a first dielectric layer and a second dielectric layer that are configured in a bonded manner; a bonding interface layer, located between the first dielectric layer and the second dielectric layer; a metal structure, located in the dielectric layer; and a diffusion barrier layer, located in the dielectric layer, where the diffusion barrier layer separates the bonding interface layer.
Claims15
A hybrid bonding structure, comprising:
- a dielectric layer, comprising a first dielectric layer and a second dielectric layer that are bonded;
- a bonding interface layer, located between the first dielectric layer and the second dielectric layer;
- a metal structure, located in the dielectric layer;
- and
- a diffusion barrier layer, located in the dielectric layer, wherein the diffusion barrier layer separates the bonding interface layer.
2 more elements
Dependencies are inferred from the claim text.