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US 2026/0255979 A1Published application
Marking method and semiconductor package
AssigneeKioxia Corporation
InventorKazuki UCHIMURA
Life of this patent
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Abstract
A marking method according to the present embodiment includes forming a mark on a metal film formed on a semiconductor package by using a chelation reaction. Forming a mark by using a chelation reaction includes applying a chelating agent to a first region on a first surface of the metal film. The chelating agent is gallic acid.
Claims14
A marking method comprising forming a mark on a metal film formed on a semiconductor package by using a chelation reaction.
A semiconductor package comprising a metal film having a first surface and containing a first metal element,
- wherein the metal film has a first portion provided on the first surface and containing a chelation compound of the first metal element.
Dependencies are inferred from the claim text.