Power Semiconductor Apparatus and Bonding Method Thereof
AssigneeDiodes Incorporated
InventorDuane Wilcoxen
Life of this patent
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Abstract
A method includes providing a device wafer including a semiconductor substrate and a metal layer disposed over the semiconductor substrate; patterning the metal layer to form a plurality of openings extending through the metal layer; forming a first adhesive layer over the metal layer, wherein the first adhesive layer is in direct contact with the semiconductor substrate through the plurality of openings; providing a backside support wafer; bonding the device wafer to the backside support wafer through the first adhesive layer; curing the first adhesive layer to secure the backside support wafer to the device wafer; and forming recessed regions in the semiconductor substrate corresponding to saw dicing lanes of the device wafer.
Claims20
A method comprising:
- providing a device wafer comprising a semiconductor substrate;
- forming a metal layer over the semiconductor substrate;
- forming a first adhesive layer over the metal layer;
- providing a backside support wafer;
- bonding the device wafer to the backside support wafer through the first adhesive layer;
- curing the first adhesive layer to secure the backside support wafer to the device wafer;
- and
- forming recessed regions in the semiconductor substrate corresponding to saw dicing lanes of the device wafer.
A bonded wafer structure comprising:
- a device wafer comprising a semiconductor substrate and a metal layer disposed over the semiconductor substrate;
- an adhesive material disposed over the metal layer;
- a backside support wafer bonded to the device wafer through the adhesive material;
- and
- a plurality of recessed regions formed in the semiconductor substrate and corresponding to saw dicing lanes of the device wafer.
A method comprising:
- providing a device wafer comprising a semiconductor substrate and a metal layer disposed over the semiconductor substrate;
- removing portions of the metal layer from regions corresponding to saw dicing lanes of the device wafer to define metal-free regions;
- forming an adhesive material over the device wafer;
- bonding a backside support wafer to the device wafer through the adhesive material;
- after bonding the backside support wafer to the device wafer, removing semiconductor material from the semiconductor substrate in the saw dicing lanes to define through-substrate openings;
- and
- singulating the device wafer and the backside support wafer along the saw dicing lanes to form a plurality of packages.
Dependencies are inferred from the claim text.