Method for manufacturing an elastic surface wave device

A method of manufacturing an elastic wave device configured to operate at a frequency below 1 GHz, and formed on a POI substrate, the formation of the POI substrate comprising the following steps:

• a) a step of implanting species in a donor substrate comprising LiTaO3 to form a layer comprising an embrittlement zone in a volume of the donor substrate, the embrittlement zone delimiting, with a main face of the donor substrate, a useful layer;
• and
• b) a step of transferring the useful layer onto a front face of a support substrate, the transferring comprising, in order, assembling the useful layer with a front face of the support substrate, and a heat treatment initiating a fracture wave along the embrittlement zone to transfer the useful layer onto the front face;
• wherein the method further comprises forming an intermediate stack, positioned between the front face and the useful layer, the intermediate stack comprising, starting from the front face, a first layer, a second layer, the first layer comprising silicon dioxide, the second layer comprising silicon nitride, alumina or aluminum nitride.