Semiconductor manufacturing method for in-situ forming metal mesh grid using shadow mask and semiconductor device formed by same method

A method of manufacturing a semiconductor device, comprising:

• forming a bottom grid electrode on a transparent base member;
• forming a light-emitting organic layer on the bottom grid electrode;
• and
• forming a top grid electrode on the light-emitting organic layer,
• wherein at least one of the forming of the bottom grid electrode or the forming of the top grid electrode is performed such that at least one of the bottom grid electrode or the top grid electrode is formed as a mesh-type electrode, and
• wherein at least one of the forming of the bottom grid electrode or the forming of the top grid electrode is performed using a deposition process in which a metal material is deposited using a shadow mask having a mesh pattern.