Quantum dot electroluminescent device and method for manufacturing same, and display device
AssigneesBeijing BOE Technology Development Co., Ltd., Boe Technology Group Co., Ltd.
InventorMaocheng JIANG
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Abstract
Provided is a quantum dot electroluminescent device. The quantum dot electroluminescent device includes an anode layer, a functional layer, and a cathode layer that are stacked; wherein the functional layer includes a quantum dot light-emitting layer, and a hole transport layer and an electron transport layer that are disposed on two sides of the quantum dot light-emitting layer, wherein the hole transport layer includes a hole transport material and carbon nanotubes, the hole transport material being bonded to the carbon nanotubes.
Claims20
A quantum dot electroluminescent device, comprising:
- an anode layer, a functional layer, and a cathode layer that are stacked;
- wherein
- the functional layer comprises a quantum dot light-emitting layer, and a hole transport layer and an electron transport layer that are disposed on two sides of the quantum dot light-emitting layer, wherein the hole transport layer comprises a hole transport material and carbon nanotubes, the hole transport material being bonded to the carbon nanotubes.
A display device, comprising:
- a quantum dot electroluminescent device, wherein the quantum dot electroluminescent device comprises an anode layer, a functional layer, and a cathode layer that are stacked;
- wherein
- the functional layer comprises a quantum dot light-emitting layer, and a hole transport layer and an electron transport layer that are disposed on two sides of the quantum dot light-emitting layer, wherein the hole transport layer comprises a hole transport material and carbon nanotubes, the hole transport material being bonded to the carbon nanotubes.
Dependencies are inferred from the claim text.