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US 2026/0255733 A1Published application
High efficient micro devices
AssigneeVueReal Inc.
InventorsGholamreza CHAJI, Ehsanollah FATHI, Hossein Zamani SIBONI
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Abstract
The present disclosure relates to a solid state micro device structure that has a microdevice formed on a substrate, with p and n doped layers, active layers between at least the two doped layers, pads coupled to each doped layer, and wherein the n-doped layer is modulated to have a lower conductivity towards an edge of the device. The invention further involves, dielectric layer, conductive layer, passivation layer and MIS structure.
Claims29
A method of creating an array of vertical microdevices by modifying lateral conduction without isolating active layers the method comprising:
- forming a microdevice on a substrate, wherein the microdevice comprises,
- p and n doped layers,
- active layers between the p and n doped layers,
- a first pad coupled to the p doped layer, and
- a second pad coupled to the n doped layer;
- forming contact layers on a surface of the doped layers wherein the contacts layers are a combination of ohmic layers and pad or bonding layers;
- and
- modulating the n-doped layer to have lower conductivity toward the edge of the microdevice.
5 more elements
Dependencies are inferred from the claim text.