Micro-leds with plasmon-assisted recombination
AssigneeHyperlume Inc.
InventorsMohsen Asad, Hossein Fariborzi, Bilal Janjua
Life of this patent
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Abstract
The present disclosure provides a plasmonic light-emitting diode device. The device includes a first conductivity-type semiconductor layer disposed of on a substrate, a multiple quantum well sheet positioned over the first conductivity-type semiconductor layer, and a second conductivity-type semiconductor layer disposed on the multiple quantum well sheet. Additionally, a contact layer is positioned over the second conductivity-type semiconductor layer, wherein the contact layer establishes an ohmic contact. The nanoholes are formed within the first conductivity-type semiconductor layer, wherein a plasmonic metal is at least partially deposited within each nanohole to facilitate surface plasmon resonance.
Claims18
A plasmonic light-emitting diode (LED) device (100), comprising:
- a first conductivity-type semiconductor layer (104) disposed on a substrate (102);
- a multiple quantum well (MQW) sheet (106) positioned over the first conductivity-type semiconductor layer (104);
- a second conductivity-type semiconductor layer (108) disposed on the MQW sheet (106);
- a contact layer (110) positioned over the second conductivity-type semiconductor layer (108), wherein the contact layer (110) establishes an ohmic contact;
- and
- a plurality of nanoholes (112) formed within the first conductivity-type semiconductor layer (104), wherein a plasmonic metal is at least partially deposited within each nanohole (112) to facilitate surface plasmon resonance.
A method for fabricating a plasmonic light-emitting diode (LED) device (100), comprising:
- epitaxially growing a first conductivity-type semiconductor layer (104) on a substrate (102);
- positioning a multiple quantum well (MQW) sheet (106) over the first conductivity-type semiconductor layer (104);
- disposing of a second conductivity-type semiconductor layer (108) over the MQW sheet (106);
- positioning a contact layer (110) over the second conductivity-type semiconductor layer (108);
- establishing an ohmic contact between the contact layer (110) and the second conductivity-type semiconductor layer (108);
- patterning a plurality of nanoholes (112) into the first conductivity-type semiconductor layer (104);
- and
- depositing a plasmonic metal into the nanoholes (112), wherein the plasmonic metal at least partially fills the nanoholes (112).
Dependencies are inferred from the claim text.