US 2026/0255706 A1 · PHOTOELECTRIC CONVERSION APPARATUS AND PHOTOELECTRIC CONVERSION SYSTEM

Abstract

Photoelectric conversion apparatus includes semiconductor layer having first second surfaces. The semiconductor layer includes first semiconductor region of first conductivity type extending from the first surface toward the second surface, second semiconductor region of the first conductivity type arranged between the first semiconductor region and the second surface to contact the first semiconductor region, third semiconductor region of second conductivity type arranged between the second semiconductor region and the second surface, and fourth semiconductor region of the second conductivity type arranged in contact with the third semiconductor region to surround the second semiconductor region and the third semiconductor region. Width of the second semiconductor region in direction parallel to the first surface is larger than width of the first semiconductor region in the direction, and smaller than width of the third semiconductor region in the direction.

Claims20

Dependent claims

A photoelectric conversion apparatus that includes a semiconductor layer including a first surface and a second surface, wherein

the semiconductor layer includes a first semiconductor region of a first conductivity type extending from the first surface toward the second surface, a second semiconductor region of the first conductivity type arranged between the first semiconductor region and the second surface so as to contact the first semiconductor region, a third semiconductor region of a second conductivity type arranged between the second semiconductor region and the second surface, and a fourth semiconductor region of the second conductivity type arranged in contact with the third semiconductor region so as to surround the second semiconductor region and the third semiconductor region, and
a width of the second semiconductor region in a direction parallel to the first surface is larger than a width of the first semiconductor region in the direction, and smaller than a width of the third semiconductor region in the direction.

A photoelectric conversion apparatus that includes a semiconductor layer including a first surface and a second surface, wherein

the semiconductor layer includes a first semiconductor region of a first conductivity type extending from the first surface toward the second surface, a second semiconductor region of the first conductivity type arranged between the first semiconductor region and the second surface so as to contact the first semiconductor region, a third semiconductor region of a second conductivity type arranged between the second semiconductor region and the second surface, a fourth semiconductor region of the second conductivity type arranged in contact with the third semiconductor region so as to surround the first semiconductor region, the second semiconductor region, and the third semiconductor region, and a pixel isolation portion arranged so as to surround the fourth semiconductor region, and
a width of the second semiconductor region in a direction parallel to the first surface is smaller than a spacing between the second semiconductor region and the pixel isolation portion in the direction.

Dependencies are inferred from the claim text.

Photoelectric conversion apparatus and photoelectric conversion system

Life of this patent

Photoelectric conversion apparatus and photoelectric conversion system

Life of this patent

Abstract

Claims20