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US 2026/0255705 A1Published application
Semiconductor device and method for manufacturing the same
AssigneeSony Semiconductor Solutions Corporation
InventorTsukasa MIURA
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Abstract
A semiconductor device (100) includes: a first substrate (2) including a first electrode (6); a second substrate (3) including a second electrode (8) disposed to face the first electrode; and an oxide layer (7) of at least one of the first electrode or the second electrode, the oxide layer (7) being disposed between the first electrode and the second electrode. The semiconductor device (100) can increase the capacitance of a capacitor, without hindering miniaturization.
Claims20
A semiconductor device comprising:
- a first substrate including a first electrode;
- a second substrate including a second electrode disposed to face the first electrode;
- and
- an oxide layer of at least one of the first electrode or the second electrode, the oxide layer being disposed between the first electrode and the second electrode.
1 more element
A method for manufacturing a semiconductor device, the method comprising:
- a step of forming a first conductive layer and a first electrode on a first substrate;
- a step of forming a second conductive layer and a second electrode on a second substrate;
- a step of forming an oxide layer by oxidizing a surface of at least one of the first electrode or the second electrode;
- and
- a step of forming a capacitor including the first electrode, the oxide layer, and the second electrode by disposing the first conductive layer and the second conductive layer to face each other, bringing the first conductive layer and the second conductive layer into contact with each other, joining the first conductive layer and the second conductive layer, and disposing the first electrode and the second electrode to face each other.
2 more elements
Dependencies are inferred from the claim text.