Diode-triggered silicon controlled-rectifier in front via backside power technology
AssigneeInternational Business Machines Corporation
InventorsAnindya Nath, Robert Gauthier, Masoud Zabihi, Anthony I-Chih Chou
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Abstract
A semiconductor device includes a silicon controlled rectifier (SCR) including a P-type doped region and an N-type doped region, an N-well region, a P-well region adjacent to the N-well region, a set of shallow trench isolation (STI) below the P-type doped region and the N-type doped region and within the N-well region and the P-well region, and a first diode and a second diode coupled in series to the SCR. The SCR, the first diode and the second diode are isolated by a set of vias extended vertically from a frontside of the semiconductor device to a backside of the semiconductor device.
Claims20
A semiconductor device, comprising:
- a silicon controlled rectifier (SCR) comprising:
- a P-type doped region,
- an N-type doped region;
- an N-well region;
- a P-well region adjacent to the N-well region, wherein the N-well region and the P-well region are located below the P-type doped region and the N-type doped region;
- and
- a set of shallow trench isolation (STI) below the P-type doped region and the N-type doped region and within the N-well region and the P-well region;
- and
- a first diode and a second diode coupled in series to the SCR, wherein the SCR, the first diode and the second diode are isolated by a set of vias extended vertically from a frontside of the semiconductor device to a backside of the semiconductor device.
A method of fabricating a semiconductor device, the method comprising:
- forming a silicon controlled rectifier (SCR) comprising:
- forming a set of shallow trench isolation (STI);
- forming an N-well region;
- forming a P-well region adjacent to the N-well region;
- and
- forming a P-type doped region and an N-type doped region;
- forming a first diode and a second diode coupled in series to the SCR;
- and
- isolating the SCR, the first diode and the second diode by a set of vias extended vertically from a frontside of the semiconductor device to a backside of the semiconductor device,
- wherein:
- the N-well region and the P-well region are located below the P-type doped region and the N-type doped region;
- and
- the set of STI is located below the P-type doped region and the N-type doped region and within the N-well region and the P-well region.
A semiconductor device, comprising:
- a silicon controlled rectifier (SCR);
- a diode coupled in series to the SCR;
- and
- a bipolar junction transistor coupled in series to the diode,
- wherein the SCR and the diode are isolated by a set of vias and a set of shallow trench isolation, and wherein well regions of the SCR and the bipolar junction transistor are coupled.
Dependencies are inferred from the claim text.