Back to results
US 2026/0255686 A1Published application
Nanosheet diode-triggered silicon controlled-rectifier
AssigneeInternational Business Machines Corporation
InventorsAnindya Nath, Robert Gauthier, Masoud Zabihi, Anthony I-Chih Chou, Md Khaled Hassan
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a true two-terminal diode with a first terminal and a second terminal, and an electrostatic discharge device, ESD, electrically connected to the diode, the ESD comprising an anode and a cathode. The diode is a triggering element and is an operative to modulate a trigger voltage of the ESD, and wherein an ESD event occurs via the anode.
Claims20
A semiconductor device, comprising:
- a diode, wherein the diode is a true two-terminal diode with a first terminal and a second terminal;
- and
- an electrostatic discharge device, ESD, electrically connected to the diode, the ESD comprising an anode and a cathode;
- wherein the diode is a triggering element and is operative to modulate a trigger voltage of the ESD, and wherein an ESD event occurs via the anode .
1 more element
A method of fabricating a semiconductor device, the method comprising:
- forming a diode, wherein the diode is a true two-terminal diode with a first terminal and a second terminal;
- forming an electrostatic discharge device, ESD comprising an anode and a cathode;
- and
- electrically connecting the ESD to the diode,
- wherein the diode is a triggering element and is operative to modulate a trigger voltage of the ESD, and wherein an ESD event occurs via the anode.
2 more elements
A semiconductor device, comprising:
- a diode;
- and
- an electrostatic discharge device, ESD, electrically connected to the diode, and
- wherein:
- the ESD is at least one of:
- a silicon-controlled rectifier, or a bipolar junction transistor.
3 more elements
Dependencies are inferred from the claim text.