Integrated circuit having fdsoi-type field-effect transistor matching
AssigneeSTMicroelectronics International N.V.
InventorGilles Chevalier-Charrin
Life of this patent
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Abstract
The present description is directed to an integrated circuit, including an FDSOI substrate where the top thin layer of silicon has a non-zero periodic variation in wavelength thickness λTSi. It includes an assembly of so-called main FDSOI type field effect transistors. Each main transistor is segmented into several elementary transistors having width We and length Le less than or equal to λTSi/2. The elementary transistors of a same main transistor are separated two by two by a distance greater than λTSi/2. The elementary transistors, adjacent by their sides, belong two by two to different main transistors, and are separated from each other by a distance less than or equal to λTSi/2.
Claims20
An integrated circuit, comprising:
- a fully depleted semiconductor on insulator (FDSOI) substrate, including a thin top layer of silicon covering an insulating layer, the thin top layer of silicon having a non-zero periodic variation in thickness of a wavelength λTSi;
- at least one assembly of main FDSOI-type field effect transistors, formed in and on the FDSOI substrate;
- each main transistor segmented into several elementary transistors each having a width We and a length Le both less than or equal to λTSi/2;
- the elementary transistors of a same main transistor being spaced two by two at a first distance greater than λTSi/2;
- and
- the elementary transistors, adjacent by their sides, belonging two by two to different main transistors, being distant from each other by a second distance less than or equal to λTSi1/2.
An electronic chip, comprising:
- an integrated circuit, comprising:
- a fully depleted semiconductor on insulator (FDSOI) substrate, including a thin top layer of silicon covering an insulating layer, the thin top layer of silicon having a non-zero periodic variation in thickness of a wavelength λTSi;
- at least one assembly of main FDSOI-type field effect transistors, formed in and on the FDSOI substrate;
- each main transistor segmented into several elementary transistors each having a width We and a length Le both less than or equal to λTSi/2;
- the elementary transistors of a same main transistor being spaced two by two at a first distance greater than λTSi/2;
- and
- the elementary transistors, adjacent by their sides, belonging two by two to different main transistors, being distant from each other by a second distance less than or equal to λTSi14/2.
Dependencies are inferred from the claim text.