US 2026/0255681 A1Published application

Display device, display module, and electronic device

AssigneeSemiconductor Energy Laboratory Co., Ltd.

InventorsKouhei TOYOTAKA, Kei TAKAHASHI, Hideaki SHISHIDO, Koji KUSUNOKI

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Abstract

A novel display device or the like in which a transistor connected to a scan line has small gate capacitance is provided. A novel display device or the like in which a scan line has low resistance is provided. A novel display device or the like in which pixels can be arranged with high density is provided. A novel display device or the like that can be manufactured without an increase in cost is provided. In a transistor including a first gate electrode and a second gate electrode, the first gate electrode is formed using a metal material with low resistance and the second gate electrode is formed using a metal oxide material that can reduce oxygen vacancies in an oxide semiconductor layer. The first gate electrode is connected to the scan line, and the second gate electrode is connected to a wiring to which a constant potential is supplied.

Claims12

Dependent claims

A light-emitting device comprising:

a pixel portion comprising a first transistor, a second transistor, a third transistor, a light-emitting element, a signal line, a current supply line, and a wiring,
wherein the first transistor is configured to control supply of current from the current supply line to the light-emitting element in accordance with a signal corresponding to an image data input to the signal line,
wherein one of a source and a drain of the second transistor is electrically connected to the signal line,
wherein the second transistor is configured to control supply of the signal corresponding to the image data to the first transistor,
wherein one of a source and a drain of the third transistor is electrically connected to a pixel electrode of the light-emitting element,
wherein the other of the source and the drain of the third transistor is electrically connected to the wiring,
wherein a first conductive layer serves as a first gate electrode of the first transistor,
wherein a semiconductor layer comprises a region over the first conductive layer and a channel region of the first transistor,
wherein a second conductive layer comprises a region over the semiconductor layer and serves as a second gate electrode of the first transistor,
wherein a first insulating layer comprises a region over the second conductive layer,
wherein a third conductive layer comprises a region over the first insulating layer,
wherein a fourth conductive layer comprises a region over the first insulating layer,
wherein a fifth conductive layer comprises a region over the first insulating layer and is electrically connected to the second conductive layer,
wherein a sixth conductive layer comprises a region over the first insulating layer,
wherein a seventh conductive layer comprises a region over the first insulating layer and serves as the wiring,
wherein a second insulating layer comprises a region over the third conductive layer, a region over the fourth conductive layer, a region over the fifth conductive layer, a region over the sixth conductive layer, and a region over the seventh conductive layer,
wherein an eighth conductive layer comprises a region over the second insulating layer, is electrically connected to the fourth conductive layer, and serves as the current supply line,
wherein a ninth conductive layer comprises a region over the second insulating layer, is electrically connected to the sixth conductive layer, and serves as the signal line,
wherein the third conductive layer is electrically connected to the pixel electrode of the light-emitting element,
wherein the eighth conductive layer comprises a region overlapping with the seventh conductive layer,
wherein the eighth conductive layer extends over at least two adjacent pixels, and
wherein the ninth conductive layer extends over at least the two adjacent pixels.

19 more elements

A light-emitting device comprising:

a pixel portion comprising a first transistor, a second transistor, a third transistor, a light-emitting element, a signal line, a current supply line, and a wiring,
wherein the first transistor is configured to control supply of current from the current supply line to the light-emitting element in accordance with a signal corresponding to an image data input to the signal line,
wherein one of a source and a drain of the second transistor is electrically connected to the signal line,
wherein the second transistor is configured to control supply of the signal corresponding to the image data to the first transistor,
wherein one of a source and a drain of the third transistor is electrically connected to a pixel electrode of the light-emitting element,
wherein the other of the source and the drain of the third transistor is electrically connected to the wiring,
wherein a first conductive layer serves as a first gate electrode of the first transistor,
wherein a semiconductor layer comprises a region over the first conductive layer and a channel region of the first transistor,
wherein a second conductive layer comprises a region over the semiconductor layer and serves as a second gate electrode of the first transistor,
wherein a first insulating layer comprises a region over the second conductive layer,
wherein a third conductive layer comprises a region over the first insulating layer,
wherein a fourth conductive layer comprises a region over the first insulating layer,
wherein a fifth conductive layer comprises a region over the first insulating layer and is electrically connected to the second conductive layer,
wherein a sixth conductive layer comprises a region over the first insulating layer,
wherein a seventh conductive layer comprises a region over the first insulating layer and serves as the wiring,
wherein a second insulating layer comprises a region over the third conductive layer, a region over the fourth conductive layer, a region over the fifth conductive layer, a region over the sixth conductive layer, and a region over the seventh conductive layer,
wherein an eighth conductive layer comprises a region over the second insulating layer, is electrically connected to the fourth conductive layer, and serves as the current supply line,
wherein a ninth conductive layer comprises a region over the second insulating layer, is electrically connected to the sixth conductive layer, and serves as the signal line,
wherein the third conductive layer, the fourth conductive layer, the fifth conductive layer, the sixth conductive layer, and the seventh conductive layer each comprise a region in contact with the second insulating layer,
wherein the third conductive layer is electrically connected to the pixel electrode of the light-emitting element,
wherein the eighth conductive layer comprises a region overlapping with the seventh conductive layer,
wherein the eighth conductive layer extends over at least two adjacent pixels, and
wherein the ninth conductive layer extends over at least the two adjacent pixels.

20 more elements

A light-emitting device comprising:

a pixel portion comprising a first transistor, a second transistor, a third transistor, a light-emitting element, a signal line, a current supply line, and a wiring,
wherein the first transistor is configured to control supply of current from the current supply line to the light-emitting element in accordance with a signal corresponding to an image data input to the signal line,
wherein one of a source and a drain of the second transistor is electrically connected to the signal line,
wherein the second transistor is configured to control supply of the signal corresponding to the image data to the first transistor,
wherein one of a source and a drain of the third transistor is electrically connected to a pixel electrode of the light-emitting element,
wherein the other of the source and the drain of the third transistor is electrically connected to the wiring,
wherein a first conductive layer serves as a first gate electrode of the first transistor,
wherein a semiconductor layer comprises a region over the first conductive layer and a channel region of the first transistor,
wherein a second conductive layer comprises a region over the semiconductor layer and serves as a second gate electrode of the first transistor,
wherein a first insulating layer comprises a region over the second conductive layer,
wherein a third conductive layer comprises a region over the first insulating layer,
wherein a fourth conductive layer comprises a region over the first insulating layer,
wherein a fifth conductive layer comprises a region over the first insulating layer and is electrically connected to the second conductive layer,
wherein a sixth conductive layer comprises a region over the first insulating layer,
wherein a seventh conductive layer comprises a region over the first insulating layer and serves as the wiring,
wherein a second insulating layer comprises a region over the third conductive layer, a region over the fourth conductive layer, a region over the fifth conductive layer, a region over the sixth conductive layer, and a region over the seventh conductive layer,
wherein an eighth conductive layer comprises a region over the second insulating layer, is electrically connected to the fourth conductive layer, and serves as the current supply line,
wherein a ninth conductive layer comprises a region over the second insulating layer, is electrically connected to the sixth conductive layer, and serves as the signal line,
wherein the third conductive layer is electrically connected to the pixel electrode of the light-emitting element,
wherein the eighth conductive layer comprises a region overlapping with the second conductive layer,
wherein the eighth conductive layer comprises a region overlapping with the seventh conductive layer,
wherein the eighth conductive layer extends over at least two adjacent pixels, and
wherein the ninth conductive layer extends over at least the two adjacent pixels.

20 more elements

A light-emitting device comprising:

a pixel portion comprising a first transistor, a second transistor, a third transistor, a light-emitting element, a signal line, a current supply line, and a wiring,
wherein the first transistor is configured to control supply of current from the current supply line to the light-emitting element in accordance with a signal corresponding to an image data input to the signal line,
wherein one of a source and a drain of the second transistor is electrically connected to the signal line,
wherein the second transistor is configured to control supply of the signal corresponding to the image data to the first transistor,
wherein one of a source and a drain of the third transistor is electrically connected to a pixel electrode of the light-emitting element,
wherein the other of the source and the drain of the third transistor is electrically connected to the wiring,
wherein a first conductive layer serves as a first gate electrode of the first transistor,
wherein a semiconductor layer comprises a region over the first conductive layer and a channel region of the first transistor,
wherein a second conductive layer comprises a region over the semiconductor layer and serves as a second gate electrode of the first transistor,
wherein a first insulating layer comprises a region over the second conductive layer,
wherein a third conductive layer comprises a region over the first insulating layer,
wherein a fourth conductive layer comprises a region over the first insulating layer,
wherein a fifth conductive layer comprises a region over the first insulating layer and is electrically connected to the second conductive layer,
wherein a sixth conductive layer comprises a region over the first insulating layer,
wherein a seventh conductive layer comprises a region over the first insulating layer and serves as the wiring,
wherein a second insulating layer comprises a region over the third conductive layer, a region over the fourth conductive layer, a region over the fifth conductive layer, a region over the sixth conductive layer, and a region over the seventh conductive layer,
wherein an eighth conductive layer comprises a region over the second insulating layer, is electrically connected to the fourth conductive layer, and serves as the current supply line,
wherein a ninth conductive layer comprises a region over the second insulating layer, is electrically connected to the sixth conductive layer, and serves as the signal line,
wherein the third conductive layer, the fourth conductive layer, the fifth conductive layer, the sixth conductive layer, and the seventh conductive layer each comprise a region in contact with the second insulating layer,
wherein the third conductive layer is electrically connected to the pixel electrode of the light-emitting element,
wherein the eighth conductive layer comprises a region overlapping with the second conductive layer,
wherein the eighth conductive layer comprises a region overlapping with the seventh conductive layer,
wherein the eighth conductive layer extends over at least two adjacent pixels, and
wherein the ninth conductive layer extends over at least the two adjacent pixels.

21 more elements

Dependencies are inferred from the claim text.

Facts

Application: 19/642,034Filed 8 Apr 2026
Priority: JP 2015-25658328 Dec 2015
Published: 27 Aug 2026
Term ends: Not estimatedThe source records don’t support an estimate.

Classification12 codes

H10D 86/60
Characterised by multiple TFTs: wherein the TFTs are in active matrices
H10D 30/6734
Multi-gate TFTs: having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
H10D 30/6739
Characterised by the electrode materials: conductor-insulator-semiconductor electrodes
H10D 30/6755
Characterised by the active materials: oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate

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