Nano-synaptic integrated device and preparation method of same

Abstract

The present invention discloses a nano-synaptic integrated device and a preparation method of the nano-synaptic integrated device. The nano-synaptic integrated device includes a substrate, an insulating layer disposed on the substrate, and a plurality of nano-synaptic units disposed on the insulating layer. Each of the nano-synaptic units includes a first microelectrode and a second microelectrode disposed facing each other and a GaN-based nanowire disposed between the first microelectrode and the second microelectrode, a first end of the GaN-based nanowire is bond-connected to the first microelectrode, and a second end of the GaN-based nanowire is bond-connected to the second microelectrode. In the present invention, the GaN-based nanowire is used as a synapse element in the device. The GaN-based nanowire has a controllable direct band gap and stable physical and chemical properties. In this nano-synaptic integrated device, the plurality of nano-synaptic units are integrated and disposed on the same substrate, which can be prepared on scale, with small size and high integration level. The plurality of nano-synaptic units can be independently controlled or can be controlled in an overall array according to an arranged array pattern.

Dependencies are inferred from the claim text.