Via formation using imprint lithography and retargeting vias formed by same
OwnerHsin-Yuan Lee, Yu-Luen Denginventors
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Abstract
A resist layer is formed over the dielectric layer. A pattern of via openings is imprinted in the resist layer, for example using nano imprint lithography. After the imprinting, the pattern of via openings imprinted in the resist layer is transferred to the dielectric layer by anisotropic etching to form via openings in the dielectric layer. The anisotropic etching has low etching selectivity between the resist layer and the dielectric layer. The via openings in the dielectric layer are filled with an electrically conductive material to form vias in the dielectric layer. A center line of at least one retargeting via of the vias is not parallel with a center line of at least one other via of the vias.
Claims20
A method of via formation, the method comprising:
- forming a dielectric layer over a substrate;
- forming a resist layer over the dielectric layer;
- pressing a patterned mask to the resist layer to transfer a pattern of the patterned mask to the resist layer;
- curing the patterned resist layer;
- removing the patterned mask;
- etching via openings in the dielectric layer based on the patterned resist layer;
- and
- filling the via openings with an electrically conductive material to form vias.
A method of via formation, the method comprising:
- forming a resist layer over a dielectric layer;
- imprinting a pattern of via openings in the resist layer;
- after the imprinting, transferring the pattern of via openings imprinted in the resist layer to the dielectric layer by anisotropic etching to form via openings in the dielectric layer;
- and
- filling the via openings in the dielectric layer with an electrically conductive material to form vias in the dielectric layer.
An electrical connection structure comprising:
- a first patterned metal layer;
- a dielectric layer disposed on the first patterned metal layer;
- a second patterned metal layer disposed on the dielectric layer, the dielectric layer being disposed between the first patterned metal layer and the second patterned metal layer;
- and
- vias passing through the dielectric layer and connecting the first patterned metal layer and the second patterned metal layer;
- wherein a center line of at least one retargeting via of the vias is not parallel with a center line of at least one other via of the vias.
Dependencies are inferred from the claim text.