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US 2026/0255495 A1Published application
Method for forming conductive structure
AssigneeDupont Electronics, Inc.
InventorsCHING MAO HUANG, YEN MING TSENG, TING HSUAN CHANG, TSUNG HAN TSAI, LI YEN LIN
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Abstract
The present disclosure provides a method for forming a conductive structure. The method comprises: i) applying a conductive ink composition on a substrate; and ii) performing an IR laser irradiation on the applied conductive ink composition. The IR laser irradiation is performed with a wavelength of 800 nm to 1150 nm and a pulse duration of 100 femtoseconds to 5000 femtoseconds, and is operated at an absolute value of defocused Z offset ranging from 2 mm to 40 mm.
Claims9
A method for forming a conductive structure, comprising:
- i) applying a conductive ink composition on a substrate;
- and
- ii) performing an IR laser irradiation on the applied conductive ink composition,
- wherein the IR laser irradiation is performed with a wavelength of 800 nm to 1150 nm and a pulse duration of 100 femtoseconds to 5000 femtoseconds;
- and
- wherein the IR laser irradiation is operated at an absolute value of defocused Z offset ranging from 2 mm to 40 mm.
3 more elements
Dependencies are inferred from the claim text.