Radio frequency switch device, wireless communication device, method
AssigneeInfineon Technologies AG
InventorsSemen Syroiezhin, Matthias Völkel, Valentyn Solomko
Life of this patent
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Abstract
In accordance with an embodiment, a radio frequency (RF) switch device includes: an RF switch comprising a plurality of transistors arranged in series and an RF switch terminal configured to receive a control voltage for controlling a switch state of the RF switch; and decoupling circuitry configured to receive a reference voltage from a reference voltage terminal, where the decoupling circuitry is configured to: block a current path from the RF switch terminal to the reference voltage terminal in response to a voltage at the RF switch and the reference voltage satisfying a predetermined criterion.
Claims20
A radio frequency (RF) switch device, comprising:
- an RF switch comprising a plurality of transistors arranged in series and an RF switch terminal configured to receive a control voltage for controlling a switch state of the RF switch;
- and
- decoupling circuitry configured to receive a reference voltage from a reference voltage terminal, wherein the decoupling circuitry is configured to:
- block a current path from the RF switch terminal to the reference voltage terminal in response to a voltage at the RF switch and the reference voltage satisfying a predetermined criterion.
A method of operating a radio frequency (RF) switch device that includes an RF switch comprising a plurality of transistors arranged in series, an RF switch terminal configured to receive a control voltage for controlling a switch state of the RF switch, and decoupling circuitry configured to receive a reference voltage from a reference voltage terminal, the method comprising:
- blocking a current path from the RF switch terminal to the a reference voltage terminal in response to a voltage at the RF switch and the reference voltage satisfying a predetermined criterion.
A radio frequency (RF) switch device, comprising:
- an RF switch comprising at least one transistor having a load path coupled between a first RF node and a second RF node;
- a diode circuit coupled between a gate of the at least one transistor and a voltage source node, wherein the diode circuit is configured to block a current path from the gate of the at least one transistor and the voltage source node in response to a voltage at the RF switch and a voltage at the voltage source node satisfying a predetermined criterion;
- and
- a first bypass transistor having a load path coupled between the gate of the at least one transistor and the voltage source node and a control node coupled to a reference voltage node.
Dependencies are inferred from the claim text.