Self-tuning for refresh rates in a high-bandwidth memory device
AssigneeMicron Technology, Inc.
InventorsBokuba Nwengela, Raymond Chang, Raghukiran Sreeramaneni, Nevil N. Gajera, Yasir Husain
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AssigneeMicron Technology, Inc.
InventorsBokuba Nwengela, Raymond Chang, Raghukiran Sreeramaneni, Nevil N. Gajera, Yasir Husain
Estimating the term…
Systems, devices, and methods for self-tuning high-bandwidth memory (HBM) devices for refresh rates are disclosed herein. In some embodiments, an HBM device includes memory dies and through-silicon vias. Each memory die can include memory cells, a temperature sensor, and a refresh rate adjustment circuit. The refresh rate adjustment circuit can be operably coupled to the memory cells and the temperature sensor, and can be configured to (i) receive a current temperature reading from the temperature sensor, (ii) receive an accumulated temperature signal characterizing temperatures of other memory dies, (iii) identify a maximum temperature, (iv) determine a scaling factor for the respective memory die, (v) receive a set of refresh commands from a host device, and (vi) filter the set of refresh commands by selectively discarding one or more refresh commands based at least in part on the determined scaling factor.
A high-bandwidth memory (HBM) device, comprising:
A method for adjusting a refresh rate of a memory die in a stack of memory dies, the method comprising:
A memory die included in a stack of memory dies, the memory die comprising:
Dependencies are inferred from the claim text.