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US 2026/0251969 A1Published application
Radiation-sensitive resist composition and pattern formation method using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsYoshinobu KAMAKURA, Taro MIYOSHI, Nobuji SAKAI, Hideomi YAMAGA, Tadao YAGI
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Abstract
A radiation-sensitive resist composition including an ionic salt (A); and a solvent (B). The ionic salt (A) including an ion (a) and a counter ion (b); the ion (a) having a metal chalcogenide cluster structure; and the counter ion (b) having a charge counter to a charge of the ion (a). The ion (a) including a halogen atom and at least one metal atom selected from Ti, Cr, Mn, Fe, Co, Cu, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Sb, Hf, Ta, W, Re, Os, Ir, Pt, Hg, Pb, or Bi.
Claims20
A radiation-sensitive resist composition comprising:
- an ionic salt (A) comprising an ion (a) and a counter ion (b), the ion (a) comprising a metal chalcogenide cluster structure, and the counter ion (b) having a charge counter to a charge of the ion (a);
- and
- a solvent (B),
- wherein the ion (a) comprises a halogen atom and at least one of Ti, Cr, Mn, Fe, Co, Cu, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Sb, Hf, Ta, W, Re, Os, Ir, Pt, Hg, Pb, or Bi.
1 more element
A pattern formation method comprising:
- applying a radiation-sensitive resist composition onto a substrate to form a resist film;
- exposing at least a portion of the resist film to radiation;
- and
- developing the exposed resist film by using a developer,
- wherein the radiation-sensitive resist composition comprises
- an ionic salt (A) comprising an ion (a) and a counter ion (b), the ion (a) comprising a metal chalcogenide cluster structure, and the counter ion (b) having a charge counter to a charge of the ion (a), and
- a solvent (B), and
- the ion (a) comprises a halogen atom and at least one of Ti, Cr, Mn, Fe, Co, Cu, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Sb, Hf, Ta, W, Re, Os, Ir, Pt, Hg, Pb, or Bi.
5 more elements
Dependencies are inferred from the claim text.