Vertical photonic switch
OwnerDonald S. Sterninventor
Life of this patent
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Abstract
A method for producing a semiconductor device that uses optical pathways and optical switches within the layers of the semiconductor integrated circuit by the means of creation of optical switches, lens and reflectors using Chemical Vapor Deposition and Rapid Thermal process equipment. Using a combination of materials optical switches, lens and reflectors can create photonic circuits which can be routed through the layers of a semiconductor device much in the same way electrical circuits are routed in existing semiconductor device today.
Claims42
An optical switching device comprising:
- a semiconductor substrate comprising a plurality of layers defining an optical path configured to transmit electromagnetic radiation at a signal wavelength;
- and
- a photochromic layer positioned within the optical path and configured to transition between a first optical state and a second optical state in response to exposure to electromagnetic radiation at a switching wavelength,
- wherein in the first optical state the photochromic layer is transmissive to electromagnetic radiation at the signal wavelength, and in the second optical state the photochromic layer is at least partially opaque to electromagnetic radiation at the signal wavelength.
A photonic logic gate comprising:
- a first photochromic switching layer embedded in a semiconductor device layer configured to transition between a transparent state and an opaque state in response to an optical switching signal;
- an optical source configured to emit electromagnetic radiation along an optical axis;
- a first curved reflector positioned to direct the electromagnetic radiation from the optical source toward the photochromic switching layer;
- an optical input waveguide configured to deliver the optical switching signal to the photochromic switching layer;
- and
- an optical output waveguide configured to receive electromagnetic radiation that passes through the photochromic switching layer when the photochromic switching layer is in the transparent state.
A photonic integrated circuit comprising:
- a semiconductor device;
- a plurality of photonic switches formed in layers in or above the semiconductor substrate, each photonic switch comprising a photochromic material configured to transition between a transparent state and an opaque state;
- a plurality of optical waveguides connecting outputs of at least some of the photonic switches to inputs of other photonic switches, wherein the optical waveguides comprise vertical waveguide pathway structures and horizontal waveguide pathway structures;
- and
- a plurality of curved reflectors positioned at intersections of the vertical via or pathway structures and the horizontal pathway structures.
A method of forming a curved optical structure in a semiconductor device, the method comprising:
- forming a via in a semiconductor layer;
- introducing a deposition gas into a plasma chamber containing a semiconductor wafer with a via in its substrate or within its layers;
- generating a dual-frequency plasma using a first radio frequency generator operating at a first radio frequency and a second radio frequency generator operating at a second radio frequency, wherein the first radio frequency is different from the second frequency;
- controlling the phase relationship between the first radio frequency and the second radio frequency to create a rotating plasma vortex;
- and
- depositing material from the plasma into the via, wherein the rotating plasma vortex causes preferential deposition in corners of the via to form a concave structure.
A method of forming a curved optical element, the method comprising:
- depositing a column of optically transparent material extending above a surface of a semiconductor structure;
- depositing a protective layer over portions of the semiconductor structure while leaving the column exposed;
- and
- exposing the column to a plasma rapid thermal process to heat the column above a melting point of the optically transparent material, wherein surface tension causes the column to form a dome-shaped structure.
Dependencies are inferred from the claim text.