Thermal donor quantity prediction method and apparatus using lifetime of silicon wafer

Abstract

Disclosed are a thermal donor quantity prediction method using the lifetime of a silicon wafer including measuring the lifetime and the thermal donor quantity of a sampling wafer before and after donor killing and comparing the same to acquire correlation data and acquiring the lifetime of a wafer to be inspected that is selected during a wafer production process before and after donor killing and predicting the thermal donor quantity based on the correlation data and a thermal donor quantity prediction apparatus that performs the method. It is possible to construct correlation data with a four-point probe and to predict the degree of generation of thermal donors in a non-destructive manner based on the correlation data, thereby reducing a decrease in production yield without wafer damage and improving thermal donor quantity prediction reliability while having high analysis capability for a front surface of a wafer.

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