Solvent-based compositions for post-etch residue removal and related methods

Abstract

Solvent-based compositions for post-etch residue removal and related methods are provided. The composition comprises a first amine halide component. The composition comprises a second amine halide component. The composition comprises a hydrogen halide component. The composition comprises an organic solvent. The organic solvent comprises a cyclic compound having at least one electron-withdrawing substituent. The organic solvent does not comprise at least one of N-methyl-2-pyrrolidone, dimethylacetamide, or any combination thereof. The first amine halide component, the second amine halide component, the hydrogen halide component, and the organic solvent are present in an amount sufficient for the composition to remove a substance at an etch rate of at least 50 Angstroms/min.

Dependencies are inferred from the claim text.