Semiconductor device and formation method thereof
AssigneesTsmc Nanjing Company, Limited, Taiwan Semiconductor Manufacturing Company, Ltd.
InventorsYaling WEI, I-Chih CHEN
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Abstract
A method of forming a semiconductor device comprises the following steps. A metal pad material is formed over an interconnect structure over a substrate. The metal pad material is patterned into a plurality of metal pads. Upper portions of the plurality of metal pads are trimmed. After the trimming, each of the plurality of metal pads has a stepped sidewall structure comprising a lower sidewall and an upper sidewall set back from the lower sidewall. A first passivation layer is formed over the plurality of metal pads.
Claims20
A method of forming a semiconductor device, comprising:
- forming a metal pad material over an interconnect structure over a substrate;
- patterning the metal pad material into a plurality of metal pads;
- trimming upper portions of the plurality of metal pads, wherein after the trimming, each of the plurality of metal pads has a stepped sidewall structure comprising a lower sidewall and an upper sidewall set back from the lower sidewall;
- and
- forming a first passivation layer over the plurality of metal pads.
A method of forming a semiconductor device, comprising:
- forming a first metal pad and a second metal pad over an interconnect structure over a substrate, wherein the first metal pad and the second metal pad are separated from each other by a pad-to-pad gap;
- forming a first passivation layer around the first metal pad and the second metal pad and in the pad-to-pad gap;
- forming a second passivation layer over the first passivation layer;
- trimming a portion of second passivation layer in the pad-to-pad gap;
- and
- forming a third passivation layer over the trimmed portion of the second passivation layer.
A semiconductor device, comprising:
- an interconnect structure over a substrate, wherein the interconnect structure comprises an inter-layer dielectric (ILD) layer and conductive portions embedded in the ILD layer;
- a first metal pad over a first one of the conductive portions;
- a second metal pad over a second one of the conductive portions, wherein each of the first metal pad and the second metal pad has a stepped sidewall;
- and
- a first passivation layer around the first metal pad and the second metal pad.
Dependencies are inferred from the claim text.