Deep trench capacitor (dtc) region in semiconductor package
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorFu-Chiang Kuo
Life of this patent
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Abstract
A semiconductor structure is provided. The semiconductor structure includes a substrate and a deep trench capacitor (DTC) region formed in the substrate. The DTC region includes a plurality of DTC units, and each DTC unit includes: a trench extending downwardly from a top surface of the substrate; a first conductive layer disposed in the trench; a second conductive layer disposed in the trench; and a dielectric layer sandwiched by the first conductive layer and the second conductive layer. Each DTC unit is elongated, and a first group of the plurality of DTC units extend horizontally in a first direction, whereas a second group of the plurality of the DTC units extend horizontally in a second direction.
Claims1
A semiconductor structure comprising:
- a substrate;
- and
- a deep trench capacitor (DTC) region formed in the substrate, wherein the DTC region comprises a plurality of DTC units, each DTC unit comprises:
- a trench extending downwardly from a top surface of the substrate;
- a first conductive layer disposed in the trench;
- a second conductive layer disposed in the trench;
- and
- a dielectric layer sandwiched by the first conductive layer and the second conductive layer;
- and
- wherein each DTC unit is elongated, a first group of the plurality of DTC units extend horizontally in a first direction, a second group of the plurality of the DTC units extend horizontally in a second direction.
Dependencies are inferred from the claim text.