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US 2026/0247871 A1Published application
Voltage-Assisted Annealing to Alter Tunnel Junction Properties
AssigneeRigetti & Co, LLC
InventorsDavid Pappas, Mark Field, Eyob A. Sete, Joshua Yousouf Mutus, Xiqiao Wang
Life of this patent
Estimating the term…
Abstract
In a general aspect, junction properties of tunnel junctions are altered by voltage-assisted annealing processes. In some cases, a method includes obtaining a circuit comprising a tunnel junction, modifying a junction resistance of the tunnel junction by applying a voltage across the tunnel junction, and obtaining a measured value of the junction resistance. The tunnel junction may include a metal and a metal oxide.
Claims23
1-61. (canceled)
A method comprising:
- obtaining a quantum processor chip comprising a plurality of superconducting quantum circuit devices, the superconducting quantum circuit devices comprising respective tunnel junctions;
- and
- tuning one or more properties of the plurality of superconducting quantum circuit devices, wherein tuning the one or more properties comprises applying voltage waveforms to the respective tunnel junctions.
64-65. (canceled)
A multi-probe system comprising:
- a probe card comprising electrical probes configured to communicate electrical signals to a plurality of superconducting quantum circuit devices in a quantum processor chip, the superconducting quantum circuit devices comprising respective tunnel junctions;
- a source measurement unit communicably coupled to the probe card;
- and
- a controller communicably coupled to the source measurement unit, the controller configured to cause the source measurement unit to modify one or more properties of the plurality of superconducting quantum circuit devices by applying voltage waveforms to the respective tunnel junctions through the electrical probes.
1 more element
74-79. (canceled)
Dependencies are inferred from the claim text.