Optoelectronic device and manufacturing method
AssigneeAledia
InventorTiphaine DUPONT
Life of this patent
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Abstract
The object of the invention is an optoelectronic device comprising a plurality of emitting layers (1, 2, 3) in a stack in a direction z, comprising at least: A first emitting layer (1) configured to emit radiation at a wavelength λ1, A second emitting layer (2) configured to emit radiation at a second wavelength λ2 different from λ1, said emitting layers (1, 2, 3) being superimposed in projection along the direction z, Advantageously, each of the emitting layers (1, 2, 3) comprises a set (10, 20, 30) of nanowires (100, 200, 300) oriented longitudinally in the direction z forming the active part of the emitting layer (1, 2, 3). Another object of the invention is a method for manufacturing such a device. Figure for the abstract: FIG. 3.
Claims16
An optoelectronic device comprising a plurality of emitting layers in a stack in a direction z, said plurality of emitting layers comprising at least:
- A first emitting layer comprising a first active part configured to emit a first radiation at a first wavelength λ1,
- A second emitting layer comprising a second active part configured to emit a second radiation at a second wavelength λ2 different from the first wavelength λ1,
- said emitting layers being at least partly superimposed in projection along the direction z,
- each emitting layer furthermore comprising, on either side of the active part:
- a bottom electrical contact layer, and
- a top electrical contact layer, said top electrical contact layer being transparent at the emission wavelength λ1, λ2 of the emitting layer in question
- wherein each of the emitting layers comprises a set of nanowires oriented longitudinally in the direction z forming the active part of the emitting layer said sets of nanowires being distinct from each other.
Dependencies are inferred from the claim text.