Heterostructures with two-dimensional active region
AssigneeThe Regents of the University of Michigan
InventorsDavid Arto Laleyan, Woncheol Lee, Ying Zhao, Yuanpeng Wu, Jun Song, Emmanouil Kioupakis, Zetian Mi
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Abstract
A device includes a substrate and a heterostructure supported by the substrate, the heterostructure including a semiconductor stack supported by the substrate, the semiconductor stack defining a junction, and a nanostructure including a layered material, the nanostructure being disposed between the semiconductor stack and the substrate and configured such that radiative recombination of charge carriers reaching the nanostructure via the junction and the substrate is achieved.
Claims27
A device comprising:
- a substrate;
- and
- a heterostructure supported by the substrate, the heterostructure comprising:
- a semiconductor stack supported by the substrate, the semiconductor stack defining a junction;
- and
- a nanostructure comprising a layered material, the nanostructure being disposed between the semiconductor stack and the substrate and configured such that radiative recombination of charge carriers reaching the nanostructure via the junction and the substrate is achieved.
A device comprising:
- a substrate;
- and
- a heterostructure supported by the substrate, the heterostructure comprising:
- a semiconductor stack supported by the substrate, the semiconductor stack defining a junction;
- and
- a two-dimensional active region disposed between the semiconductor stack and the substrate, the two-dimensional active region being configured for photoemission upon charge carriers reaching the two-dimensional active region via the junction.
A method of fabricating a device, the method comprising:
- forming a nanostructure on a substrate, the nanostructure comprising a layered material;
- and
- forming a semiconductor stack on the nanostructure such that the nanostructure is disposed between the semiconductor stack and the substrate, such that the semiconductor stack defines a junction, and such that radiative recombination of charge carriers reaching the nanostructure via the junction and the substrate is achieved.
A light emitting device comprising:
- a substrate;
- and
- a heterostructure supported by the substrate, the heterostructure comprising an active region configured for photoemission;
- wherein the active region comprises hexagonal boron nitride.
Dependencies are inferred from the claim text.