Light-Emitting Chip and Method for Manufacturing Same

A light-emitting chip, comprising at least one epitaxial layer of a light-emitting chip, each epitaxial layer of the light-emitting chip comprising a first semiconductor layer, a first active layer, a second semiconductor layer and substrate, wherein

• the first semiconductor layer, the first active layer and the second semiconductor layer are located on a first side of the substrate;
• top surfaces of the first semiconductor layer, the first active layer, the second semiconductor layer and the substrate are located on a first horizontal plane and serve as light-emitting surfaces;
• bottom surfaces of the first semiconductor layer, the first active layer, the second semiconductor layer and the substrate are located on a second horizontal plane;
• the light-emitting chip further comprises a first electrode electrically connected with the first semiconductor layer and a second electrode electrically connected with the second semiconductor layer, and the first electrode and the second electrode are disposed insulated from each other;
• a height L3 between the bottom surfaces and the top surfaces of the first semiconductor layer, the first active layer, the second semiconductor layer and the substrate is greater than or equal to 0.3 micron and smaller than or equal to 15 microns;
• and
• lengths L2 of the first semiconductor layer, the first active layer, the second semiconductor layer and the substrate are the same, and L2 is greater than or equal to a product of L3 and 2.