Semiconductor device including transistors with different threshold voltages
AssigneesArk HDPS Semiconductor Pte. LIMITED., Power systems thinker LTD.
InventorChin-Fu Chen
Life of this patent
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Abstract
A semiconductor device includes a trench disposed in a substrate and extending laterally along a first direction. A gate electrode is disposed in the trench. A first body region is disposed in the substrate and located in a first area. A second body region is located in the first area, disposed directly below and in direct contact with the first body region. The second body region has a doping concentration higher than that of the first body region. A source region is disposed within the first body region. A source contact penetrates the source region and extends downwards into the first body region. A drain region is disposed on a back side of the substrate.
Claims22
A semiconductor device, comprising:
- a substrate, having a first conductivity type;
- a trench, extending along a first direction and disposed in the substrate;
- a gate electrode, disposed in the trench;
- a first body region, having a second conductivity type, disposed in the substrate and located in a first area;
- a second body region, having the second conductivity type, located in the first area, disposed directly below the first body region, and in direct contact with the first body region, wherein the second body region has a doping concentration higher than a doping concentration of the first body region;
- a source region, having the first conductivity type and disposed within the first body region;
- a source contact, penetrating the source region and extending downwards into the first body region;
- and
- a drain region, having the first conductivity type and disposed on a back side of the substrate.
A semiconductor device, comprising:
- a substrate, having a first conductivity type;
- a trench, extending along a first direction and disposed in the substrate;
- a gate electrode, disposed in the trench;
- a source region, having the first conductivity type and adjacent to the gate electrode;
- and
- a body region, extending along the first direction, and comprising a first segment and a second segment, wherein the first segment comprises a first body region and a second body region, the second segment comprises the first body region, and a doping concentration of the second body region is higher than a doping concentration of the first body region;
- wherein the first segment constitutes a part of a first transistor, the first transistor has a first threshold voltage, the second segment constitutes a part of a second transistor, the second transistor has a second threshold voltage, and the first threshold voltage is higher than the second threshold voltage.
A semiconductor device, comprising:
- a substrate, having a first conductivity type;
- a trench, extending along a first direction and disposed in the substrate;
- a gate electrode, disposed in the trench;
- a source region, having the first conductivity type and adjacent to the gate electrode;
- and
- a plurality of body regions, extending along the first direction, wherein the plurality of body regions is spaced apart from each other by the substrate, each of the plurality of body regions has surfaces abutting the substrate, and the surfaces comprise a bottom surface extending along the first direction and a side surface extending along a second direction,
- wherein each of the plurality of body regions comprises a first body region with a lower doping concentration and a second body region with a higher doping concentration, and the second body region is disposed below the first body region;
- and
- when a bias voltage is applied to the gate electrode, a first current channel and a second current channel are formed, the first current channel enters each of the plurality of body regions from the bottom surface, passes through the second body region and the first body region to reach the source region;
- and the second current channel enters each of the plurality of body regions from the side surface, passes through the first body region, not through the second body region to reach the source region.
Dependencies are inferred from the claim text.