Semiconductor device

A manufacturing method of a semiconductor device comprising:

• forming an active region in a substrate, the active region having a first region width in a first direction and a first region length in a second direction, the second direction perpendicular to the first direction, wherein the active region comprises a continuous region bounded laterally by insulating regions;
• forming a first gate line and a second gate line extending in the second direction in the active region, the second gate line spaced apart from the first gate line in the first direction,
• forming a first active contact region, a second active contact region, and a dummy contact region between the first active contact region and the second active contact region in the active region, wherein the first active contact region is at one side of the first gate line, the second active contact region is at one side of the second gate line, and the dummy contact region is between the first gate line and the second gate line;
• forming a first source/drain contact pattern in the first active contact region, the first source/drain contact pattern being spaced apart from the first gate line in the first direction;
• forming a second source/drain contact pattern in the second active contact region, the second source/drain contact pattern being spaced apart from the second gate line in the first direction;
• and
• forming a dummy source/drain contact pattern in the dummy contact region between the first gate line and the second gate line,
• wherein the first source/drain contact pattern and the second source/drain contact pattern each extend to a first edge of the active region and a second edge of the active region, wherein the first edge and the second edge are opposite edges in the second direction, and
• wherein the dummy source/drain contact pattern is spaced apart from at least one of the first edge or the second edge in the second direction.

A manufacturing method of a semiconductor device comprising:

• forming an active region in a substrate;
• forming a plurality of gate lines spaced apart from each other in a first direction in the active region, the plurality of gate lines extending in a second direction perpendicular to the first direction in the active region, the plurality of gate lines including a first gate line and a second gate line;
• forming a first active contact region, a second active contact region, and a plurality of dummy contact regions in the active region, wherein the first active contact region is at one side of the first gate line and the second active contact region is at one side of the second gate line, and the plurality of dummy contact regions are in the active region between the plurality of gate lines;
• forming a first source/drain contact pattern in the first active contact region;
• forming a second source/drain contact pattern in the second active contact region;
• and
• forming a plurality of dummy source/drain contact patterns in at least one of the plurality of dummy contact regions,
• wherein greatest lengths of the plurality of dummy source/drain contact patterns in the second direction are less than a greatest length of the first source/drain contact pattern in the second direction and a greatest length of the second source/drain contact pattern in the second direction, and
• wherein the plurality of dummy source/drain contact patterns, the first source/drain contact pattern, and the second source/drain contact pattern have substantially quadrilateral shapes in a cross-sectional view.