Method for heteroepitaxial deposition of diamond and wafer produced thereby
AssigneeFraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
InventorsJan KUSTERMANN, Jan ENGELS
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Abstract
Methods are provided for the heteroepitaxial deposition of diamond on a substrate by chemical vapor deposition (CVD), comprising the following steps: generating a nucleation layer on the substrate; overgrowing the nucleation layer with a diamond layer by chemical vapor deposition; partial removal of the diamond layer by dry chemical etching, wherein the dry chemical etching is carried out by the action of a plasma which comprises hydrogen and oxygen; overgrowing the diamond layer by chemical vapor deposition; and cyclic repetition of the partial removal of the diamond layer and the overgrowing of the diamond layer. Furthermore, wafers manufactured in this manner are provided.
Claims20
A method for the heteroepitaxial deposition of diamond on a substrate by means of chemical vapor deposition (CVD), comprising the following steps:
- a. Providing a substrate having at least one first side and depositing a nucleation layer on at least a part of the first side of the substrate;
- b. Depositing a first diamond layer on the nucleation layer by chemical vapor deposition;
- c. Partial removal of the first diamond layer by dry chemical etching, wherein the dry chemical etching is carried out by the action of a plasma which comprises at least hydrogen and oxygen;
- d. Depositing a second diamond layer by chemical vapor deposition on the etched surface of the first diamond layer;
- and
- e. Cyclic repetition of the method steps c) and d).
A method for the heteroepitaxial deposition of diamond on a substrate by means of chemical vapor deposition (CVD), comprising the following steps:
- a. Providing a substrate having a diameter of more than 5 cm and less than 26 cm and having at least one first side and depositing a nucleation layer on at least a part of the first side of the substrate;
- b. Depositing a first diamond layer on the nucleation layer by chemical vapor deposition by the action of a plasma which comprises at least hydrogen and a hydrocarbon;
- c. Partial removal of the first diamond layer by dry chemical etching, wherein the dry chemical etching is carried out by the action of a plasma which comprises at least hydrogen and oxygen;
- d. Depositing a second diamond layer by chemical vapor deposition on the etched surface of the first diamond layer by the action of a plasma which comprises at least hydrogen and a hydrocarbon;
- and
- e. Cyclic repetition of the method steps c) and d) until the diamond has an overall thickness of more than 200 μm.
A method for the heteroepitaxial deposition of diamond on a substrate by means of chemical vapor deposition (CVD), comprising the following steps:
- a. Providing a substrate having at least one first side and depositing a nucleation layer on at least a part of the first side of the substrate;
- b. Depositing a first diamond layer on the nucleation layer by chemical vapor deposition by the action of a plasma which comprises at least hydrogen and a hydrocarbon;
- c. Partial removal of the first diamond layer by dry chemical etching, wherein the dry chemical etching is carried out by the action of a plasma which comprises at least hydrogen and oxygen;
- d. Depositing a second diamond layer by chemical vapor deposition on the etched surface of the first diamond layer by the action of a plasma which comprises at least hydrogen and a hydrocarbon;
- and
- e. Cyclic repetition of the method steps c) and d) until the diamond has an overall thickness of more than 200 μm, wherein
- the first four to eight diamond layers are deposited with a smaller layer thickness than the subsequent diamond layers.
Dependencies are inferred from the claim text.