Semiconductor device

A semiconductor device, comprising:

• a first electrode extending along a first direction;
• a second electrode extending along the first direction, a second direction from the first electrode to the second electrode crossing the first direction;
• a third electrode including a first electrode portion extending along the first direction, a position of the first electrode portion in the second direction being a first electrode position of the first electrode in the second direction and a second electrode position of the second electrode in the second direction;
• and
• a semiconductor member;
• the semiconductor member including:
• a first semiconductor region including Alx1Ga1-x1N (0 ≤x1<1), and
• a second semiconductor region including Alx2Ga1-x2N (x1<x2≤1),
• a part of the second semiconductor region being between the first semiconductor region and the first electrode and between the first semiconductor region and the second electrode in a third direction crossing a plane including the first direction and the second direction,
• the second semiconductor region includes a first semiconductor portion including a first side face and a second semiconductor portion including a second side face,
• at least a part of the first electrode portion being between the first side face and the second side face in the second direction,
• the second side face including a plurality of first portions along a first portion direction and a plurality of second portions along a second portion direction,
• one of the plurality of first portions being between one of the plurality of second portions and another one of the plurality of second portions,
• the first portion direction being inclined with respect to the second direction,
• the second portion direction crossing the first portion direction,
• the first side including a plurality of third portions along a third portion direction and a plurality of fourth portions along a fourth portion direction, and
• one of the plurality of third portions being between one of the plurality of fourth portions and another one of the plurality of fourth portions,
• the third partial direction being inclined with respect to the second direction,
• the fourth partial direction crossing the third partial direction,
• a first angle between the first partial direction and the second direction being different from a third angle between the third partial direction and the second direction and different from a fourth angle between the fourth partial direction and the second direction, and
• a second angle between the second partial direction and the second direction being different from the third angle and different from the fourth angle.

A semiconductor device, comprising:

• a first electrode extending along a first direction;
• a second electrode extending along the first direction, a second direction from the first electrode to the second electrode crossing the first direction;
• a third electrode extending along the first direction, a position of the third electrode in the second direction being between a first electrode position of the first electrode in the second direction and a second electrode position of the second electrode in the second direction;
• and
• a semiconductor member,
• the semiconductor member including:
• a first semiconductor region including Alx1Ga1-x1N (0 ≤x1<1), and
• a second semiconductor region including Alx2Ga1-x2N (x1<x2≤1),
• the first semiconductor region including a first partial region, a second partial region, a third partial region, a fourth partial region, and a fifth partial region,
• a direction from the first partial region to the first electrode being along a third direction crossing a plane including the first direction and the second direction,
• a direction from the second partial region to the second electrode being along the third direction,
• a direction from the third partial region to the third electrode being along the third direction,
• a fourth position of the fourth partial region in the second direction being between a first position of the first partial region in the second direction and a third position of the third partial region in the second direction,
• a fifth position of the fifth partial region in the second direction being between the third position and a second position of the second electrode in the second direction,
• a direction from the fifth partial region to the second semiconductor region being along the third direction,
• a direction from a part of the third electrode to the fifth partial region being along the second direction,
• the second semiconductor region including a side face facing the third electrode in the second direction,
• the side face including a plurality of first portions along a first partial direction and a plurality of second portions along a second partial direction,
• one of the plurality of first portions being between one of the plurality of second portions and another one of the plurality of second portions,
• the first portion direction being inclined with respect to the second direction, and
• the second portion direction crossing the first portion direction.