Reversed feedback amplifier and cascaded wideband high-gain amplifier circuits

Abstract

A reversed feedback amplifier includes a MOSFET having a drain input terminal connected to an amplifier input port and a gate output terminal connected to an amplifier output port. A passive shunt admittance is between the amplifier input and output terminals. A series passive impedance is in series with a source common terminal of the MOSFET. A pre-embedding capacitive admittance is between the drain input terminal and the source common terminal of the MOSFET. The passive shunt admittance and series passive impedance are selected to provide max gain operation of the MOSFET, and the pre-embedding capacitive admittance is selected to be absorbed into drain-source parasitic capacitance of the MOSFET, and to compensate passive losses of the passive shunt admittance and the series passive impedance.

Dependencies are inferred from the claim text.