Flip-and-transfer ridge laser diode structure and method

A mesa structure providing active region protection, the mesa structure including a plurality of semiconductor layers, the mesa structure characterized by a length with two ends, comprising:

• a donor substrate having a top surface;
• a sacrificial layer overlying the top surface of the donor substrate;
• a first semiconductor region overlying the sacrificial layer;
• an active region overlying the first semiconductor region;
• a second semiconductor region overlying the active region, the second semiconductor region having a substantially flat top surface;
• sidewalls extending from the top surface of the second semiconductor region to the donor substrate to provide an overall mesa shape when viewed in cross section perpendicular to the length, the sidewalls including ridge cutouts so as to form a sub-mesa within the mesa shape, the ridge cutouts extending from the top surface of the second semiconductor region a distance down each sidewall toward the donor substrate and terminating within the first semiconductor region to form shelves;
• a first passivation material coating the top surface of the second semiconductor region and the sidewalls and the shelves of the ridge cutouts;
• a contact region on or within an upper portion of the second semiconductor region;
• a via extending through the first passivation material to the contact region;
• and
• an anchor material coating a surface of the mesa structure, wherein along the length of the mesa structure, the anchor material extends down the sidewalls of the mesa structure and terminates at the top surface of the donor substrate to form anchor portions, and wherein along the ends of the mesa structure, the anchor material extends down the sidewalls of the mesa structure and terminates above the top surface of the donor substrate to form non-anchor portions.

A mesa structure on a carrier substrate, the mesa structure including a plurality of semiconductor layers, comprising:

• a bonding material coupling the mesa structure to the carrier substrate, wherein the bonding material is coupled to a contact region of the mesa structure;
• a first semiconductor region comprising the contact region;
• an active region overlying the first semiconductor region;
• and
• a second semiconductor region overlying the active region, the second semiconductor region and the first semiconductor region having substantially flat surfaces that are substantially parallel to each other and form opposing upper and lower boundaries of the mesa structure respectively, the substantially flat surface of the first semiconductor region coupled to the carrier substrate by the bonding material;
• wherein the first semiconductor region, the active region, and a portion of the second semiconductor region form a first mesa shape, and the remaining portion of the second semiconductor region forms a second mesa shape,
• wherein sidewalls of the first mesa shape extend upward and outward from the substantially flat surface of the first semiconductor region in a direction toward the second mesa shape, and a passivation material extends along the sidewalls of the first mesa shape, and
• wherein sidewalls of the second mesa shape extend downward and outward from the substantially flat surface of the second semiconductor region in a direction toward the first mesa shape.