Controlled Environment Photoresist Processing System and Method

A system comprising:

• a thermal processing chamber;
• a hot plate disposed within the thermal processing chamber, wherein the hot plate is configured to support a metal oxide resist (MOR) photoresist sample;
• an O2 gas source coupled to the thermal processing chamber by way of a first mass flow controller;
• and
• a controller having at least one processor and a memory storing program instructions, wherein the at least one processor executes the program instructions so as to carry out operations, the operations comprising:
• causing the hot plate to heat the MOR photoresist sample at a predetermined temperature for a predetermined period of time, wherein the predetermined temperature is within a range of 50° C.-350° C., and wherein the predetermined period of time is within a range of 60 seconds to 240 seconds;
• and
• adjusting the first mass flow controller to maintain a predetermined atmospheric condition in the thermal processing chamber, wherein the predetermined atmospheric condition comprises an O2 concentration within a range of 22% to 50%.

A method comprising:

• adjusting a first mass flow controller to control a flow of O2 into a thermal processing chamber so as to maintain a predetermined atmospheric condition in the thermal processing chamber, wherein the predetermined atmospheric condition comprises an O2 concentration of 22% to 50%;
• introducing a metal oxide resist (MOR) photoresist sample into the thermal processing chamber;
• and
• thermally processing, by a hot plate in the thermal processing chamber, the MOR photoresist sample at a predetermined temperature for a predetermined period of time, while maintaining the predetermined atmospheric condition within the thermal processing chamber, wherein the predetermined temperature is within a range of 50° C.-350° C., and wherein the predetermined period of time is within a range of 60 seconds to 240 seconds.