Euv resist underlayer film-forming composition
AssigneeNissan Chemical Corporation
InventorsShou SHIMIZU, Mamoru TAMURA
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Abstract
A composition for forming a resist underlayer film that enables the formation of a desired resist pattern; and a method for producing a resist pattern and a method for producing a semiconductor device, each of which uses the composition for forming a resist underlayer film. The composition for forming an EUV resist underlayer film has a basic organic group substituted with a protective group on a side chain of a (meth)acrylic polymer and further includes a solvent, but does not include a polymer other than the (meth)acrylic polymer. The organic group is an acyloxy group that has an amino group substituted with a protective group, or that has a nitrogen-containing heterocycle substituted with a protective group.
Claims8
An EUV resist underlayer film-forming composition comprising a (meth)acrylic polymer having a basic organic group substituted with a tert-butoxycarbonyl group on a side chain thereof and further comprising an organic solvent, and comprising no polymer other than the (meth)acrylic polymer,
- wherein the (meth)acrylic polymer is a polymer having a unit structure represented by the following formula (1):
- where:
- R1 represents a hydrogen atom or a methyl group,
- X represents an acyloxy group having an amino group substituted with a protecting group or an acyloxy group having a nitrogen-containing heterocyclic ring substituted with a protecting group, and
- L represents a —C(═O)OR2— group, in which R2 represents an alkylene group having 1 to 10 carbon atoms, part of the hydrogen atoms of the alkylene group being replaced by a hydroxy group.
Dependencies are inferred from the claim text.