Systems and methods for temperature monitoring of power switching devices
AssigneeGE Aviation Systems LLC
InventorsSimon Edward Roper, Joseph John Atkins
Life of this patent
Estimating the term…
Abstract
A system and method for temperature monitoring of power switching devices are described herein. In some approaches, a system for monitoring a temperature rise within a transistor with an integrated temperature sensing diode includes a current source and a control unit. The current source is configured to provide a current to the integrated temperature sensing diode. The control unit is operably coupled to the current source and the integrated temperature sensing diode and configured to receive a temperature dependent voltage signal, determine a temperature rise in the transistor and output a trip signal to turn off the transistor based on the temperature rise.
Claims20
A system for monitoring a temperature rise within a transistor, the transistor comprising an integrated temperature sensing diode, the system comprising:
- a current source electrically coupled to the integrated temperature sensing diode to provide a current to the integrated temperature sensing diode;
- and
- a control unit operably coupled to the current source and the integrated temperature sensing diode, the control unit configured to:
- receive a temperature dependent voltage signal;
- determine a temperature rise in the transistor based on the temperature dependent voltage signal;
- and
- output a trip signal to turn off the transistor based on the temperature rise.
A system for monitoring a temperature rise within a transistor, the transistor comprising an integrated temperature sensing diode, the system comprising:
- a current source electrically coupled to the integrated temperature sensing diode to provide a current to the integrated temperature sensing diode;
- and
- an analogue to digital converter (ADC) electrically coupled to the integrated temperature sensing diode;
- a processor configured to:
- receive digital signals from the ADC;
- compute a temperature rise in the transistor based on the digital signals;
- compare the computed temperature rise to a predetermined threshold;
- and
- output a trip signal to turn off the transistor when the computed temperature rise exceeds a predetermined threshold.
A method for monitoring a temperature rise within a transistor, the transistor including an integrated temperature sensing diode, the method comprising:
- sensing a temperature-dependent voltage signal;
- determining a temperature rise in the transistor based on the temperature-dependent voltage signal;
- comparing the temperature rise in the transistor to a predetermined threshold;
- and
- outputting a trip signal to turn off the transistor when the temperature rise exceeds a predetermined threshold.
Dependencies are inferred from the claim text.