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US 2026/0242945 A1Published application
Topology-selective deposition method and structure formed using same
AssigneeASM IP Holding B.V.
InventorTimothee Blanquart
Life of this patent
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Abstract
A topology-selective deposition method is disclosed. An exemplary method includes depositing a first layer of material overlying a gap or feature on a substrate surface, depositing a second layer of material overlying the first layer of material, and selectively removing the first layer of material.
Claims20
A topology-selective deposition method comprising the steps of:
- providing a substrate within a reaction chamber, the substrate comprising patterned structures on a surface of the substrate, the patterned structures comprising a gap, the gap comprising a proximal surface, a distal surface, and a sidewall;
- depositing, within the reaction chamber, a first layer of material on the patterned structures, thereby conformally forming a first layer on the proximal surface, the distal surface, and the sidewall;
- depositing, within the reaction chamber, a second layer of material overlying the first layer of material within the reaction chamber, wherein a conformality of the second layer overlying the proximal surface, the distal surface, and the sidewall is less than a conformality of the first layer of material overlying the proximal surface, the distal surface, and the sidewall;
- and
- selectively etching the first layer of material relative to the second layer within the reaction chamber,
- wherein an etch rate of the first layer of material is 10 or more percent higher than an etch rate of the second layer of material,
- wherein after the step of selectively etching, a portion of the first layer of material and a portion of the second layer of material remain on at least one of the proximal surface and the distal surface and substantially no or no first layer material remains on the sidewall, and
- wherein the second layer of material comprises an oxycarbide, an oxycarbonitride, a transition metal oxide, a post transition metal oxide, a transition metal nitride, a post transition metal nitride, or amorphous silicon.
5 more elements
A topology-selective deposition method comprising the steps of:
- providing a substrate within a reaction chamber, the substrate comprising patterned structures on a surface of the substrate, the patterned structures comprising a gap, the gap comprising a proximal surface, a distal surface, and a sidewall;
- depositing, within the reaction chamber, a first layer of material on the patterned structures, thereby conformally forming a first layer on the proximal surface, the distal surface, and the sidewall;
- depositing a second layer of material overlying the first layer of material, wherein the second layer of material is selectively formed on at least one of the proximal surface and the distal surface relative to the sidewall;
- and
- selectively etching the first layer of material relative to the second layer within the reaction chamber,
- wherein an etch rate of the first layer of material is 10 or more percent higher than an etch rate of the second layer of material,
- wherein after the step of selectively etching, a portion of the first layer of material and a portion of the second layer of material remain on at least one of the proximal surface and the distal surface and substantially no or no first layer material remains on the sidewall, and
- wherein the second layer of material comprises an oxycarbide, an oxycarbonitride, a transition metal oxide, a post transition metal oxide, a transition metal nitride, a post transition metal nitride, or amorphous silicon.
5 more elements
A topology-selective deposition method comprising the steps of:
- providing a substrate comprising patterned structures on a surface of the substrate, the patterned structures comprising a gap, the gap comprising a proximal surface, a distal surface, and a sidewall;
- depositing a first layer of material on the patterned structures, thereby conformally forming a first layer on the proximal surface, the distal surface, and the sidewall;
- depositing a second layer of material overlying the first layer of material, wherein the second layer of material is selectively formed on at least one of the proximal surface and the distal surface relative to the sidewall;
- and
- selectively etching the first layer of material relative to the second layer of material to thereby form features comprising topology-selective deposited material, and
- wherein after the step of selectively etching, at least a portion of the first layer of material remains on the proximal surface and the distal surface and substantially no or no first layer material remains on the sidewall.
3 more elements
Dependencies are inferred from the claim text.