Back to results
US 2026/0242204 A1Published application
Microelectromechanical device and a method
AssigneeMurata Manufacturing Co., Ltd.
InventorsAntti IIHOLA, Altti TORKKELI
Life of this patent
Estimating the term…
Abstract
A microelectromechanical device is provided that includes a MEMS device layer a handle layer and a cap layer. The device also includes an interposer layer between the handle layer and the MEMS device layer. The interposer layer includes an insulating layer on the surface of the handle layer and a polysilicon layer on the insulating layer. The device layer includes a mobile mass element. The polysilicon layer lies beneath the mass element and is electrically connected to a first external contact in the cap layer through the device layer.
Claims20
A microelectromechanical device comprising:
- a MEMS device layer that defines an xy-plane, where a z-direction is perpendicular to the xy-plane, the MEMS device layer comprising silicon and including a first measurement region and a via region, the first measurement region being electrically isolated from the via region;
- a handle layer having a surface that faces the MEMS device layer;
- a cap layer that is on an opposite side of the MEMS device layer than the handle layer;
- and
- an interposer layer between the handle layer and the MEMS device layer, the interposer layer comprising an insulating layer on the surface of the handle layer and a polysilicon layer on the insulating layer,
- wherein the polysilicon layer comprises an electrode region that is adjacent to the first measurement region of the MEMS device layer, and the electrode region of the polysilicon layer is separated from the first measurement region of the MEMS device layer by a first gap,
- wherein the polysilicon layer further comprises an interconnection region that extends from the electrode region to the via region of the MEMS device layer, so that the electrode region of the polysilicon layer is in electrical contact with the via region of the MEMS device layer, and
- wherein the via region of the MEMS device layer is electrically connected to a first external contact in the cap layer.
5 more elements
A method for manufacturing a microelectromechanical device, the method comprising:
- providing a MEMS device layer formed of a silicon and comprising a first measurement region and a via region;
- providing a handle layer and a cap layer that comprises a first external contact;
- forming an oxide layer on a first side of the MEMS device layer;
- forming an opening in the oxide layer in the via region of the MEMS device layer;
- depositing a polysilicon layer on the oxide layer at least in the first measurement region and the via region of the MEMS device layer, so that the polysilicon layer comes into contact with the MEMS device layer through the opening in the via region;
- forming an insulating layer on the polysilicon layer;
- bonding the handle layer to the insulating layer;
- removing the oxide layer at least from the first measurement region of the MEMS device layer;
- and
- bonding the cap layer to a second side of the MEMS device layer so that the first external contact in the cap layer comes into electrical contact with the via region of the MEMS device layer,
- wherein the second side of the MEMS device layer is opposite to the first side.
8 more elements
A microelectromechanical device comprising:
- a MEMS device layer comprising silicon and defining an xy-plane, wherein a z-direction is perpendicular to the xy-plane;
- a handle layer having a surface that faces toward the MEMS device layer;
- a cap layer that is on an opposite side of the MEMS device layer than the handle layer;
- a mobile mass element in the MEMS device layer and comprising a first measurement region;
- and
- an interposer layer between the handle layer and the MEMS device layer, the interposer layer comprising an insulating layer on the surface of the handle layer and a polysilicon layer on the insulating layer,
- wherein the polysilicon layer comprises an electrode region that is adjacent to the first measurement region of the mass element, and the electrode region of the polysilicon layer is separated from the first measurement region by a first gap in the z-direction,
- wherein the cap layer comprises a cap electrode that faces and is adjacent to a second measurement region on the mass element, and the cap electrode is separated from the second measurement region by a second gap in the z-direction, and
- wherein a height of the first gap in the z-direction is substantially equal to a height of the second gap in the z-direction.
6 more elements
Dependencies are inferred from the claim text.