Semiconductor Device and Manufacturing Method for Same
AssigneeHitachi, Ltd.
InventorsHiroyuki MATSUSHIMA, Haruka SHIMIZU
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AssigneeHitachi, Ltd.
InventorsHiroyuki MATSUSHIMA, Haruka SHIMIZU
Estimating the term…
The performance is improved for a semiconductor device which is a semiconductor chip having an exposed terminal and which comprises a semiconductor substrate provided with a semiconductor element. A semiconductor device having the following is used as a means for accomplishing this: a first main surface; a second main surface on an opposite side from the first main surface; a semiconductor substrate provided with a semiconductor element; a first terminal which is connected, via an electrically conductive first bonding material, to a first electrode that is disposed in contact with the first main surface; a second terminal which is insulated from the first terminal and is connected, via an electrically conductive second bonding material, to a second electrode that is disposed in contact with the second main surface; an insulating material that seals the semiconductor substrate and a part of each of the first terminal and the second terminal; a third main surface which is positioned on the first bonding material side with regard to the semiconductor substrate and on which the first terminal and second terminal are exposed; and a fourth main surface on an opposite side from the third main surface. The second terminal is led out to the third main surface side by a lead-out electrode that resides at a distance from a multilayered structure that contains the semiconductor substrate, the first electrode, and the first bonding material. The interval between the first terminal and the second terminal is insulated by the insulating material.
A semiconductor device comprising:
A manufacturing method for a semiconductor device, the method comprising the steps of:
Dependencies are inferred from the claim text.