Method for manufacturing semiconductor device including seam-free isolation structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsPo-Hsien CHENG, Keng-Chu LIN, Chien-Hung LIN
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Abstract
A method for manufacturing a semiconductor device includes: forming a base semiconductor structure on a substrate; patterning the base semiconductor structure to form a trench that is recessed into the base semiconductor structure along a vertical direction normal to the base semiconductor structure; and performing a cyclic ion implantation process to form an isolation layer portion that fully fills the trench.
Claims20
A method for manufacturing a semiconductor device, comprising:
- forming a base semiconductor structure on a substrate;
- patterning the base semiconductor structure to form a trench that is recessed into the base semiconductor structure along a vertical direction normal to the base semiconductor structure;
- and
- performing a cyclic ion implantation process to form an isolation layer portion that fully fills the trench.
A method for manufacturing a semiconductor device, comprising:
- forming a base semiconductor structure on a substrate;
- patterning the base semiconductor structure to form a trench that is recessed into the base semiconductor structure along a vertical direction normal to the base semiconductor structure;
- performing a deposition process to form an isolation layer that fills the trench and that is formed with a seam;
- and
- subjecting the isolation layer to a cyclic ion implantation process so that the isolation layer fully fills the seam.
A method for manufacturing a semiconductor device, comprising:
- forming a base semiconductor structure on a substrate;
- patterning the base semiconductor structure to form a trench that is recessed into the base semiconductor structure along a vertical direction normal to the base semiconductor structure;
- forming a liner in the trench;
- and
- performing a cyclic ion implantation process to form an isolation layer portion that fully fills the trench and that is surrounded by the liner.
Dependencies are inferred from the claim text.