Square silicon substrate and manufacturing method therefor
AssigneeMitsubishi Materials Corporation
InventorsDaisuke Kaneko, Shinji Kato
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Abstract
There is provided a method for manufacturing a square silicon substrate having a first surface for circuit formation and a second surface located opposite to the first surface. The method includes: a slicing step of slicing a silicon ingot to form a square plate member; a grinding step of grinding both surfaces of the plate member; a polishing step of mechanically polishing one surface of the plate member subjected to the grinding step to form a square silicon substrate having the first surface, in which the square silicon substrate is formed to have a thickness of 0.5 mm or more and 2.0 mm or less without performing chemical etching in the grinding step, in the polishing step, and between the polishing step and the grinding step.
Claims6
A square silicon substrate,
- wherein a thickness is 0.5 mm or more and 2.0 mm or less,
- a total thickness variation (hereinafter, referred to as TTV) in a first surface for circuit formation is 100.0 m or less, and
- a maximum peak height Rp of the first surface is 100.0 nm or less.
A method for manufacturing a square silicon substrate having a first surface for circuit formation and a second surface located opposite to the first surface, the method comprising:
- a slicing step of slicing a silicon ingot to form a square plate member;
- a grinding step of grinding both surfaces of the plate member;
- and
- a polishing step of mechanically polishing one surface of the plate member subjected to the grinding step to form the first surface in the square silicon substrate,
- wherein the square silicon substrate is formed to have a thickness of 0.5 mm or more and 2.0 mm or less without performing chemical etching in the grinding step, in the polishing step, and between the grinding step and the polishing step.
Dependencies are inferred from the claim text.