Image sensing device
AssigneeSK hynix Inc.
InventorYoung Gyu YOU
Life of this patent
Estimating the term…
Abstract
An image sensing device is provided to comprise: a first photodetector disposed in a first pixel area; a second photodetector disposed in a second pixel area disposed on one side of the first pixel area, each of the first photodetector and the second photodetector configured to produce electrical signals in response to incident light; a charge flooding barrier disposed in a non-pixel area located between the first pixel area and the second pixel area, the non-pixel area disposed without including any photodetector for detecting the incident light; and a charge flooding barrier control node overlapping the charge flooding barrier and configured to control a potential of the charge flooding barrier.
Claims20
An image sensing device, comprising:
- a first photodetector disposed in a first pixel area;
- a second photodetector disposed in a second pixel area disposed on one side of the first pixel area, each of the first photodetector and the second photodetector configured to produce electrical signals in response to incident light;
- a charge flooding barrier disposed in a non-pixel area located between the first pixel area and the second pixel area, the non-pixel area disposed without including any photodetector for detecting the incident light;
- and
- a charge flooding barrier control node overlapping the charge flooding barrier and configured to control a potential of the charge flooding barrier.
An image sensing device comprising:
- a first photodetector and a second photodetector that are configured to generate photocharges corresponding to an intensity of incident light;
- a first transfer transistor connected between the first photodetector and a floating diffusion area and configured to transfer photocharges accumulated in the first photodetector to the floating diffusion area;
- a second transfer transistor connected to the second photodetector and the floating diffusion area and configured to transfer photocharges accumulated in the second photodetector to the floating diffusion area;
- and
- a charge flooding barrier control node disposed between the first transfer transistor and the floating diffusion area and between the second transfer transistor and the floating diffusion area, the charge flooding barrier control node configured to control a potential of a charge flooding barrier disposed between the first photodetector and the second photodetector.
Dependencies are inferred from the claim text.