Semiconductor device and methods of formation

A method, comprising:

• forming a first electrostatic discharge (ESD) circuit on a substrate,
• wherein the first ESD circuit comprises a first grounded-gate metal-oxide semiconductor transistor;
• forming a second ESD circuit on the substrate,
• wherein the second ESD circuit comprises a second grounded-gate metal-oxide semiconductor transistor;
• coupling a first source/drain region of the first grounded-gate metal-oxide semiconductor transistor to a supply voltage;
• and
• coupling a second source/drain region of the first grounded-gate metal-oxide semiconductor transistor to a first source/drain region of the second grounded-gate metal-oxide semiconductor transistor,
• wherein the first grounded-gate metal-oxide semiconductor transistor and the second grounded-gate metal-oxide semiconductor transistor have a same doping type.

A semiconductor device, comprising:

• a plurality of interconnected electrostatic discharge (ESD) circuits on a substrate,
• wherein a first ESD circuit of the plurality of interconnected ESD circuits is electrically connected to a second ESD circuit of the plurality of interconnected ESD circuits,
• wherein the second ESD circuit of the plurality of interconnected ESD circuits is electrically connected to a third ESD circuit of the plurality of interconnected ESD circuits,
• wherein each of the first ESD circuit, the second ESD circuit, and the third ESD circuit comprises a grounded-gate metal-oxide semiconductor transistor, and
• wherein each of the first ESD circuit, the second ESD circuit, and the third ESD circuit has approximately a same bias voltage.