Biosensor
AssigneeLG Electronics Inc.
InventorsKyounghwa KIM, Taekyu CHOI, Younghwan KIM
Life of this patent
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Abstract
Proposed is a biosensor. The biosensor includes a substrate, a first gate formed on the substrate, a second gate formed on the substrate, and a potential measurement unit formed between the first gate and the second gate and configured to measure potential of the first gate and potential of the second gate, wherein channel portions are formed between the first gate and the potential measurement unit and between the potential measurement unit and the second gate, so it has an effect that it is possible to reduce measurement noise and improve the sensing accuracy by maintaining gate potential at a constant level.
Claims15
A biosensor comprising:
- a substrate;
- a first gate formed on the substrate;
- a second gate formed on the substrate;
- and
- a potential measurement unit formed between the first gate and the second gate and configured to measure potential of the first gate and potential of the second gate,
- wherein channel portions are formed between the first gate and the potential measurement unit and between the potential measurement unit and the second gate.
A biosensor comprising:
- a substrate;
- a gate formed on the substrate;
- and
- a potential measurement unit formed on the substrate at a position spaced apart by a predetermined distance,
- wherein a channel portion is formed between the gate and the potential measurement unit.
A sensing system comprising:
- a biosensor cartridge having a flow path through which a solution flows;
- a biosensor disposed in the biosensor cartridge;
- and
- a diagnostic device configured to analyze signals received from the biosensor,
- wherein the biosensor comprises:
- a substrate;
- a first gate formed on the substrate;
- a second gate formed on the substrate;
- and
- a potential measurement unit formed between the first gate and the second gate and configured to measure potential of the first gate and potential of the second gate, and
- channel portions are formed between the first gate and the potential measurement unit and between the potential measurement unit and the second gate.
Dependencies are inferred from the claim text.