Multi-soi structure, device, and methods for forming and using the same

A multi-SOI structure, comprising:

• a first bias-controlled SOI region of a base substrate, the first bias-controlled SOI region comprising:
• a buried dielectric layer within the base substrate;
• a pickup layer upon the buried dielectric layer;
• a semiconducting substrate above the pickup layer which is electrically isolated from the base substrate by the buried dielectric layer;
• a contact layer electrically connected to the pickup layer;
• and
• an isolation region above and connected to the contact layer.

A method for forming a multi-SOI substrate, comprising:

• doping a first SOI region and a second SOI region to form one or more buried sidewall dopant layers;
• doping the first SOI region and the second region to form a buried dopant layer;
• doping the first SOI region with a first dopant type to form a first pickup layer;
• doping the second SOI region with a second dopant type to form a second pickup layer;
• doping the first SOI region and the second SOI region to form a first contact layer electrically connected to the first pickup layer and a second contact layer electrically connected to the second pickup layer;
• annealing to form a buried dielectric layer from the one or more buried sidewall dopant layers and the buried dopant layer;
• forming isolation regions connected to sidewalls of the buried dielectric layer to form a first semiconducting substrate in the first SOI region and a second semiconducting substrate in the second SOI region that are electrically isolated from the a base substrate;
• and
• forming at least one isolation region over the first contact layer and the second contact layer.